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FDP047N10
onsemi

FDP047N10

MFR #FDP047N10

FPN#FDP047N10-FL

MFRonsemi

Part DescriptionMOSFET N-Channel 100V 120A (Tc) 375W (Tc) Through Hole, TO-220-3
Datasheet
44762-Datasheet
Quote Onlymore info
Multiples of: 1000more info
Prices are in USD
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Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameFDP047N10
Packaging TypeTube
Packaging Quantity1000
Lifecycle StatusLast Time Buy
RoHSCompliant with Exemption
RoHS Exemption Type7(a), RoHS (2015/863)
ROHS ChinaNot Compliant
Reach StatusNot Compliant
Channel ModeEnhancement
ConfigurationN-Channel
Drain Source Voltage100V
Drive Voltage10V
FET FeatureN/R
FET OptionsN/R
FET TypeSingle
Gate to Source Voltage±20V
Input Capacitance15265pF
Input Capacitance Test Voltage25V
Life Cycle StatusLast Time Buy
Maximum Continuous Drain Current120A (Tc)
Maximum Drain to Source Resistance4.7 mOhm @ 75A, 10V
Maximum Gate to Source Threshold Voltage4.5V @ 250µA
Maximum Junction Temperature175°C (TJ)
Maximum Power Dissipation375W (Tc)
Maximum Pulse Drain Current656A
Maximum Total Gate Charge210nC
Maximum Total Gate Charge Test Voltage10V
Minimum Junction Temperature-55°C (TJ)
Package TypeTO-220-3
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge36nC
Typical Gate to Source Charge56nC