FDP030N06B-F102
MFR #FDP030N06B-F102
FPN#FDP030N06B-F102-FL
MFRonsemi
Part DescriptionN-Channel 60 V 120A (Tc) 205W (Tc) Through Hole TO-220-3
Datasheet
Quote Only
Product Attributes
| Main Category | Semiconductors |
| Category | Discrete Semiconductors |
| Sub Category | Transistors |
| Family Name | FDP030N06B_F102 |
| Packaging Type | Tube |
| Packaging Quantity | 50 |
| Lifecycle Status | Active |
| RoHS | Compliant with Exemption |
| RoHS Exemption Type | 7(a), RoHS (2015/863) |
| ROHS China | Not Compliant |
| Reach Status | Not Compliant |
| Channel Mode | Enhancement |
| Configuration | N-Channel |
| Drain Source Voltage | 60V |
| Drive Voltage | 10V |
| FET Feature | N/R |
| FET Options | N/R |
| FET Type | Single |
| Gate to Source Voltage | ±20V |
| Input Capacitance | 8030pF |
| Input Capacitance Test Voltage | 30V |
| Life Cycle Status | Active |
| Maximum Continuous Drain Current | 120A (Tc) |
| Maximum Drain to Source Resistance | 3.1 mOhm @ 100A, 10V |
| Maximum Gate to Source Threshold Voltage | 4V @ 250µA |
| Maximum Junction Temperature | 175°C (TJ) |
| Maximum Power Dissipation | 205W (Tc) |
| Maximum Pulse Drain Current | 780A |
| Maximum Total Gate Charge | 99nC |
| Maximum Total Gate Charge Test Voltage | 10V |
| Minimum Junction Temperature | -55°C (TJ) |
| Package Type | TO-220-3 |
| Technology | MOSFET (Metal Oxide) |
| Typical Gate to Drain Charge | 12nC |
| Typical Gate to Source Charge | 29nC |