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FDP023N08B-F102
onsemi

FDP023N08B-F102

MFR #FDP023N08B-F102

FPN#FDP023N08B-F102-FL

MFRonsemi

Part DescriptionN-Channel 75 V 120A (Tc) 245W (Tc) Through Hole TO-220-3
Datasheet
102122-Datasheet
Quote Onlymore info
Multiples of: 50more info
Prices are in USD
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Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameFDP023N08B
Packaging TypeTube
Packaging Quantity50
Lifecycle StatusActive
RoHSCompliant with Exemption
RoHS Exemption Type7(a), RoHS (2015/863)
ROHS ChinaNot Compliant
Reach StatusNot Compliant
Channel ModeEnhancement
ConfigurationN-Channel
Drain Source Voltage75V
Drive Voltage10V
FET FeatureN/R
FET OptionsN/R
FET TypeSingle
Gate to Source Voltage±20V
Input Capacitance13765pF
Input Capacitance Test Voltage37.5V
Life Cycle StatusActive
Maximum Continuous Drain Current120A (Tc)
Maximum Drain to Source Resistance2.35 mOhm @ 75A, 10V
Maximum Gate to Source Threshold Voltage3.8V @ 250µA
Maximum Junction Temperature175°C (TJ)
Maximum Power Dissipation245W (Tc)
Maximum Pulse Drain Current968A
Maximum Total Gate Charge195nC
Maximum Total Gate Charge Test Voltage10V
Minimum Junction Temperature-55°C (TJ)
Package TypeTO-220-3
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge31.7nC
Typical Gate to Source Charge50.3nC