(404) 551-4447EMEA TeamContact UsAbout UsCareers
loading content
FDN86265P
onsemi

FDN86265P

MFR #FDN86265P

FPN#FDN86265P-FL

MFRonsemi

Part DescriptionMOSFET P-Channel 150V 800mA (Ta) SOT-23-3
Datasheet
165583-Datasheet
Quote Onlymore info
Prices are in USD
Flip Electronics may assess a Tariff Recovery Fee relating to Tariffs on subject countries, including but not limited to China. The final charge will be included on Flip’s invoice. Flip Electronics reserves the right to assess this charge whenever a tariff is incurred or as additional country of origin information is known, even if no Tariff Recovery Fee is initially quoted.

Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameFDN86265P
Lifecycle StatusActive
RoHSCompliant
RoHS Exemption TypeNone, RoHS (2015/863)
ROHS ChinaCompliant
Reach StatusCompliant
Channel ModeEnhancement
ConfigurationP-Channel
Drain Source Voltage150V
Drive Voltage6V, 10V
FET FeatureN/R
FET OptionsN/R
FET TypeSingle
Gate to Source Voltage±25V
Input Capacitance210pF
Input Capacitance Test Voltage75V
Life Cycle StatusActive
Maximum Continuous Drain Current800mA (Ta)
Maximum Drain to Source Resistance1.2 Ohm @ 800mA, 10V
Maximum Gate to Source Threshold Voltage4V @ 250µA
Maximum Junction Temperature150°C (TJ)
Maximum Power Dissipation1.5W (Ta)
Maximum Pulse Drain Current5A
Maximum Total Gate Charge4.1nC
Maximum Total Gate Charge Test Voltage10V
Minimum Junction Temperature-55°C (TJ)
Package TypeSOT-23-3
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge800pC
Typical Gate to Source Charge800pC