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FDN86265P
onsemi

FDN86265P

MFR #FDN86265P

FPN#FDN86265P-FL

MFRonsemi

Part DescriptionMOSFET P-Channel 150V 800mA (Ta) SOT-23-3
Datasheet
165583-Datasheet
Quote Onlymore info
Prices are in USD
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Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameFDN86265P
Packaging TypeTape and Reel
Packaging Quantity3000
Lifecycle StatusActive
RoHSCompliant
RoHS Exemption TypeNone, RoHS (2015/863)
ROHS ChinaCompliant
Reach StatusCompliant
Channel ModeEnhancement
ConfigurationP-Channel
Drain Source Voltage150V
Drive Voltage6V, 10V
FET FeatureN/R
FET OptionsN/R
FET TypeSingle
Gate to Source Voltage±25V
Input Capacitance210pF
Input Capacitance Test Voltage75V
Life Cycle StatusActive
Maximum Continuous Drain Current800mA (Ta)
Maximum Drain to Source Resistance1.2 Ohm @ 800mA, 10V
Maximum Gate to Source Threshold Voltage4V @ 250µA
Maximum Junction Temperature150°C (TJ)
Maximum Power Dissipation1.5W (Ta)
Maximum Pulse Drain Current5A
Maximum Total Gate Charge4.1nC
Maximum Total Gate Charge Test Voltage10V
Minimum Junction Temperature-55°C (TJ)
Package TypeSOT-23-3
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge800pC
Typical Gate to Source Charge800pC