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FDN5632N-F085
onsemi

FDN5632N-F085

MFR #FDN5632N-F085

FPN#FDN5632N-F085-FL

MFRonsemi

Part DescriptionN-Channel 60 V 1.7A (Ta) 1.1W (Ta) Surface Mount SOT-23-3
Datasheet
100769-Datasheet
Quote Onlymore info
Multiples of: 3000more info
Prices are in USD
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Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameFDN5632N_F085
Lifecycle StatusActive (NRND)
RoHSCompliant
RoHS Exemption TypeNone, RoHS (2015/863)
ROHS ChinaCompliant
Reach StatusCompliant
Channel ModeEnhancement
ConfigurationN-Channel
Drain Source Voltage60V
Drive Voltage4.5V, 10V
FET FeatureN/R
FET OptionsN/R
FET TypeSingle
Gate to Source Voltage±20V
Input Capacitance475pF
Input Capacitance Test Voltage15V
Life Cycle StatusActive (NRND)
Maximum Continuous Drain Current1.7A (Ta)
Maximum Drain to Source Resistance82 mOhm @ 1.7A, 10V
Maximum Gate to Source Threshold Voltage3V @ 250µA
Maximum Junction Temperature150°C (TJ)
Maximum Power Dissipation1.1W (Ta)
Maximum Pulse Drain Current10A
Maximum Total Gate Charge12nC
Maximum Total Gate Charge Test Voltage10V
Minimum Junction Temperature-55°C (TJ)
Package TypeSOT-23-3
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge1.4nC
Typical Gate to Source Charge1.4nC