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FDN5618P
onsemi

FDN5618P

MFR #FDN5618P

FPN#FDN5618P-FL

MFRonsemi

Part DescriptionMOSFET P-Channel 60V 1.25A (Ta) 500mW (Ta) Surface Mount, TO-236-3
Datasheet
44755-Datasheet
Quote Onlymore info
Multiples of: 3000more info
Prices are in USD
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Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameFDN5618P-FSC
Packaging TypeTape and Reel
Packaging Quantity3000
Lifecycle StatusActive
RoHSCompliant
RoHS Exemption TypeNone, RoHS (2015/863)
ROHS ChinaCompliant
Reach StatusCompliant
Channel ModeEnhancement
ConfigurationP-Channel
Drain Source Voltage60V
Drive Voltage4.5V, 10V
FET FeatureN/R
FET OptionsN/R
FET TypeSingle
Gate to Source Voltage±20V
Input Capacitance430pF
Input Capacitance Test Voltage30V
Life Cycle StatusActive
Maximum Continuous Drain Current1.25A (Ta)
Maximum Drain to Source Resistance170 mOhm @ 1.25A, 10V
Maximum Gate to Source Threshold Voltage3V @ 250µA
Maximum Junction Temperature150°C (TJ)
Maximum Power Dissipation460mW (Ta)
Maximum Pulse Drain Current10A
Maximum Total Gate Charge13.8nC
Maximum Total Gate Charge Test Voltage10V
Minimum Junction Temperature-55°C (TJ)
Package TypeSOT-23-3
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge1.3nC
Typical Gate to Source Charge1.5nC