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FDN358P
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Product Attributes
| Main Category | Semiconductors |
| Category | Discrete Semiconductors |
| Sub Category | Transistors |
| Family Name | FDN358P |
| Packaging Type | Tape and Reel |
| Packaging Quantity | 3000 |
| Lifecycle Status | Active |
| ROHS | Compliant |
| RoHs Exemption Type | None, RoHS (2015/863) |
| RoHs China | Compliant |
| Reach Status | Compliant |
| Channel Mode | Enhancement |
| Configuration | P-Channel |
| Drain Source Voltage | 30V |
| Drive Voltage | 4.5V, 10V |
| FET Feature | N/R |
| FET Options | N/R |
| FET Type | Single |
| Gate to Source Voltage | ±20V |
| Input Capacitance | 182pF |
| Input Capacitance Test Voltage | 15V |
| Life Cycle Status | Active |
| Maximum Continuous Drain Current | 1.5A (Ta) |
| Maximum Drain to Source Resistance | 125 mOhm @ 1.5A, 10V |
| Maximum Gate to Source Threshold Voltage | 3V @ 250µA |
| Maximum Junction Temperature | 150°C (TJ) |
| Maximum Operating Temperature | N/A |
| Maximum Power Dissipation | 500mW (Ta) |
| Maximum Pulse Drain Current | 5A |
| Maximum Total Gate Charge | 5.6nC |
| Maximum Total Gate Charge Test Voltage | 10V |
| Minimum Junction Temperature | -55°C (TJ) |
| Minimum Operating Temperature | N/A |
| Package Type | SOT-23-3 |
| Technology | MOSFET (Metal Oxide) |
| Typical Gate to Drain Charge | 800pC |
| Typical Gate to Source Charge | 800pC |