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FDN352AP
onsemi

FDN352AP

MFR #FDN352AP

FPN#FDN352AP-FL

MFRonsemi

Part DescriptionP-Channel 30 V 1.3A (Ta) 500mW (Ta) Surface Mount, SOT-23-3
Datasheet
44753-Datasheet
Quote Onlymore info
Multiples of: 3000more info
Prices are in USD
Flip Electronics may assess a Tariff Recovery Fee relating to Tariffs on subject countries, including but not limited to China. The final charge will be included on Flip’s invoice. Flip Electronics reserves the right to assess this charge whenever a tariff is incurred or as additional country of origin information is known, even if no Tariff Recovery Fee is initially quoted.

Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameFDN352AP
Packaging TypeTape and Reel
Packaging Quantity3000
Lifecycle StatusActive
RoHSCompliant
RoHS Exemption TypeNone, RoHS (2015/863)
ROHS ChinaCompliant
Reach StatusCompliant
Channel ModeEnhancement
ConfigurationP-Channel
Drain Source Voltage30V
Drive Voltage4.5V, 10V
FET FeatureN/R
FET OptionsN/R
FET TypeSingle
Gate to Source Voltage±25V
Input Capacitance150pF
Input Capacitance Test Voltage15V
Life Cycle StatusActive
Maximum Continuous Drain Current1.3A (Ta)
Maximum Drain to Source Resistance180 mOhm @ 1.3A, 10V
Maximum Gate to Source Threshold Voltage2.5V @ 250µA
Maximum Junction Temperature150°C (TJ)
Maximum Power Dissipation500mW (Ta)
Maximum Pulse Drain Current10A
Maximum Total Gate Charge1.9nC
Maximum Total Gate Charge Test Voltage4.5V
Minimum Junction Temperature-55°C (TJ)
Package TypeSOT-23-3
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge500pC
Typical Gate to Source Charge500pC