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FDN306P
onsemi

FDN306P

MFR #FDN306P

FPN#FDN306P-FL

MFRonsemi

Part DescriptionMOSFET P-Channel 12V 2.6A (Ta) SOT-23-3
Datasheet
145852-Datasheet
Quote Onlymore info
Multiples of: 3000more info
Prices are in USD
Flip Electronics may assess a Tariff Recovery Fee relating to Tariffs on subject countries, including but not limited to China. The final charge will be included on Flip’s invoice. Flip Electronics reserves the right to assess this charge whenever a tariff is incurred or as additional country of origin information is known, even if no Tariff Recovery Fee is initially quoted.

Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameFDN306P
Packaging TypeTape and Reel
Packaging Quantity3000
Lifecycle StatusActive
RoHSCompliant
RoHS Exemption TypeNone, RoHS (2015/863)
ROHS ChinaCompliant
Reach StatusCompliant
Channel ModeEnhancement
ConfigurationP-Channel
Drain Source Voltage12V
Drive Voltage1.8V, 4.5V
FET FeatureN/R
FET OptionsN/R
FET TypeSingle
Gate to Source Voltage±8V
Input Capacitance1138pF
Input Capacitance Test Voltage6V
Life Cycle StatusActive
Maximum Continuous Drain Current2.6A (Ta)
Maximum Drain to Source Resistance40 mOhm @ 2.6A, 4.5V
Maximum Gate to Source Threshold Voltage1.5V @ 250µA
Maximum Junction Temperature150°C (TJ)
Maximum Power Dissipation460mW (Ta)
Maximum Pulse Drain Current10A
Maximum Total Gate Charge17nC
Maximum Total Gate Charge Test Voltage4.5V
Minimum Junction Temperature-55°C (TJ)
Package TypeSOT-23-3
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge3nC
Typical Gate to Source Charge2nC