
onsemi
FDMT1D3N08B
MFR #FDMT1D3N08B
FPN#FDMT1D3N08B-FL
MFRonsemi
Part DescriptionMOSFET N-CH 80V 164A 8DL COOL88
Datasheet
Quote Only
Product Attributes
| Main Category | Semiconductors |
| Category | Discrete Semiconductors |
| Sub Category | Transistors |
| Family Name | FDMT1D3N08B |
| Packaging Type | Tape and Reel |
| Packaging Quantity | 3000 |
| Lifecycle Status | Obsolete |
| RoHS | Compliant with Exemption |
| RoHS Exemption Type | 7(a), RoHS (2015/863) |
| Reach Status | Not Compliant |
| Channel Mode | Enhancement |
| Configuration | N-Channel |
| Drain Source Voltage | 80V |
| Drive Voltage | 8V, 10V |
| FET Feature | N/R |
| FET Options | N/R |
| FET Type | Single |
| Gate to Source Voltage | ±20V |
| Input Capacitance | 19600pF |
| Input Capacitance Test Voltage | 40V |
| Life Cycle Status | Last Time Buy |
| Maximum Continuous Drain Current | 164A (Tc) |
| Maximum Drain to Source Resistance | 1.35 mOhm @ 36A, 10V |
| Maximum Gate to Source Threshold Voltage | 4V @ 250µA |
| Maximum Junction Temperature | 150°C (TJ) |
| Maximum Operating Temperature | N/A |
| Maximum Power Dissipation | 178W (Tc) |
| Maximum Pulse Drain Current | 864A |
| Maximum Total Gate Charge | 260nC |
| Maximum Total Gate Charge Test Voltage | 10V |
| Minimum Junction Temperature | -55°C (TJ) |
| Minimum Operating Temperature | N/A |
| Package Type | 8-Dual Cool™88 |
| Technology | MOSFET (Metal Oxide) |
| Typical Gate to Drain Charge | 37nC |
| Typical Gate to Source Charge | 67nC |
