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FDMS9600S
onsemi

FDMS9600S

MFR #FDMS9600S

FPN#FDMS9600S-FL

MFRonsemi

Part DescriptionMOSFET Array 30V 12A, 16A 1W Surface Mount, 8-PowerDFN
Datasheet
44748-Datasheet
Quote Onlymore info
Multiples of: 3000more info
Prices are in USD
Flip Electronics may assess a Tariff Recovery Fee relating to Tariffs on subject countries, including but not limited to China. The final charge will be included on Flip’s invoice. Flip Electronics reserves the right to assess this charge whenever a tariff is incurred or as additional country of origin information is known, even if no Tariff Recovery Fee is initially quoted.

Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameFDMS9600S
Packaging TypeTape and Reel
Packaging Quantity3000
Lifecycle StatusObsolete
RoHSCompliant
RoHS Exemption TypeNone, RoHS (2015/863)
ROHS ChinaCompliant
Reach StatusCompliant
Channel ModeEnhancement
Configuration2 N-Channel
Drain Source Voltage30V
Drive Voltage4.5V, 10V
FET FeatureLogic Level Gate
FET OptionsN/R
FET TypeArray
Gate to Source Voltage±20V
Input Capacitance1705pF
Input Capacitance Test Voltage15V
Life Cycle StatusObsolete
Maximum Continuous Drain Current12A, 16A
Maximum Drain to Source Resistance8.5 mOhm @ 12A, 10V, 5.5 mOhm @ 16A, 10V
Maximum Gate to Source Threshold Voltage3V @ 250µA
Maximum Junction Temperature150°C (TJ)
Maximum Power Dissipation1W
Maximum Pulse Drain Current60A
Maximum Total Gate Charge13nC
Maximum Total Gate Charge Test Voltage4.5V
Minimum Junction Temperature-55°C (TJ)
Package Type8-MLP (5x6), Power56
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge6.5nC
Typical Gate to Source Charge3nC