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FDMS86550

FDMS86550

MFR #FDMS86550

FPN#FDMS86550-FL

MFRonsemi

Part DescriptionMOSFET N-CH 60V 32A/155A POWER56
Quote Onlymore info
Multiples of: 3000more info
Prices are in USD
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Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameFDMS86550
Packaging TypeTape and Reel
Packaging Quantity3000
Lifecycle StatusActive
RoHSCompliant with Exemption
RoHS Exemption Type7(a), RoHS (2015/863)
ROHS ChinaNot Compliant
Reach StatusNot Compliant
Channel ModeEnhancement
ConfigurationN-Channel
Drain Source Voltage60V
Drive Voltage8V, 10V
FET FeatureN/R
FET OptionsN/R
FET TypeSingle
Gate to Source Voltage±20V
Input Capacitance11530pF
Input Capacitance Test Voltage30V
Life Cycle StatusActive
Maximum Continuous Drain Current32A (Ta), 155A (Tc)
Maximum Drain to Source Resistance1.65 mOhm @ 32A, 10V
Maximum Gate to Source Threshold Voltage4.5V @ 250µA
Maximum Junction Temperature150°C (TJ)
Maximum Power Dissipation2.7W (Ta), 156W (Tc)
Maximum Pulse Drain Current1.02kA
Maximum Total Gate Charge154nC
Maximum Total Gate Charge Test Voltage10V
Minimum Junction Temperature-55°C (TJ)
Package Type8-PQFN (5x6)
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge20nC
Typical Gate to Source Charge40nC