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FDMS86500LE
onsemi

FDMS86500LE

MFR #FDMS86500LE

FPN#FDMS86500LE-FL

MFRonsemi

Part DescriptionMOSFET N-Channel 60V 25A (Ta), 158A (Tc) 8-SON
Datasheet
44735-Datasheet
Quote Onlymore info
Multiples of: 3000more info
Prices are in USD
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Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameFDMS86500L
Lifecycle StatusObsolete
RoHSCompliant
RoHS Exemption TypeRoHS (2015/863), Unknown
Reach StatusCompliant
Channel ModeEnhancement
ConfigurationN-Channel
Drain Source Voltage60V
Drive Voltage4.5V, 10V
FET FeatureN/R
FET OptionsN/R
FET TypeSingle
Gate to Source Voltage±20V
Input Capacitance12530pF
Input Capacitance Test Voltage30V
Life Cycle StatusObsolete
Maximum Continuous Drain Current25A (Ta), 158A (Tc)
Maximum Drain to Source Resistance2.5 mOhm @ 25A, 10V
Maximum Gate to Source Threshold Voltage3V @ 250µA
Maximum Junction Temperature150°C (TJ)
Maximum Power Dissipation2.5W (Ta), 104W (Tc)
Maximum Pulse Drain Current799A
Maximum Total Gate Charge165nC
Maximum Total Gate Charge Test Voltage10V
Minimum Junction Temperature-55°C (TJ)
Package Type8-PQFN (5x6)
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge11.5nC
Typical Gate to Source Charge26.6nC