(404) 551-4447EMEA TeamContact UsAbout UsCareers
loading content
FDMS86300
onsemi

FDMS86300

MFR #FDMS86300

FPN#FDMS86300-FL

MFRonsemi

Part DescriptionMOSFET N-Channel 80V 19A (Ta) 80A (Tc) 2.5W (Ta) 104W (Tc) Surface Mount, 8-PQFN
Datasheet
44732-Datasheet
Quote Onlymore info
Multiples of: 3000more info
Prices are in USD
Flip Electronics may assess a Tariff Recovery Fee relating to Tariffs on subject countries, including but not limited to China. The final charge will be included on Flip’s invoice. Flip Electronics reserves the right to assess this charge whenever a tariff is incurred or as additional country of origin information is known, even if no Tariff Recovery Fee is initially quoted.

Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameFDMS86300
Packaging TypeTape and Reel
Packaging Quantity3000
Lifecycle StatusActive
ROHSCompliant with Exemption
RoHs Exemption Type7(a), RoHS (2015/863)
RoHs ChinaNot Compliant
Reach StatusNot Compliant
Channel ModeEnhancement
ConfigurationN-Channel
Drain Source Voltage80V
Drive Voltage8V, 10V
FET FeatureN/R
FET OptionsN/R
FET TypeSingle
Gate to Source Voltage±20V
Input Capacitance7082pF
Input Capacitance Test Voltage40V
Life Cycle StatusActive
Maximum Continuous Drain Current19A (Ta), 80A (Tc)
Maximum Drain to Source Resistance3.9 mOhm @ 19A, 10V
Maximum Gate to Source Threshold Voltage4.5V @ 250µA
Maximum Junction Temperature150°C (TJ)
Maximum Operating TemperatureN/A
Maximum Power Dissipation2.5W (Ta), 104W (Tc)
Maximum Pulse Drain Current120A
Maximum Total Gate Charge86nC
Maximum Total Gate Charge Test Voltage10V
Minimum Junction Temperature-55°C (TJ)
Minimum Operating TemperatureN/A
Package Type8-PQFN (5x6)
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge14.9nC
Typical Gate to Source Charge28.2nC