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FDMS86200E
onsemi

FDMS86200E

MFR #FDMS86200E

FPN#FDMS86200E-FL

MFRonsemi

Part Description9.6A (Ta), 35A (Tc)
Datasheet
44729-Datasheet
Quote Onlymore info
Prices are in USD
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Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameFDMS86200
Lifecycle StatusObsolete
RoHSCompliant with Exemption
RoHS Exemption Type7(a), RoHS (2015/863)
Reach StatusNot Compliant
Channel ModeEnhancement
ConfigurationN-Channel
Drain Source Voltage150V
Drive Voltage6V, 10V
FET FeatureN/R
FET OptionsN/R
FET TypeSingle
Gate to Source Voltage±20V
Input Capacitance2715pF
Input Capacitance Test Voltage75V
Life Cycle StatusObsolete
Maximum Continuous Drain Current35A (Tc)
Maximum Drain to Source Resistance18 mOhm @ 9.6A, 10V
Maximum Gate to Source Threshold Voltage4V @ 250µA
Maximum Junction Temperature150°C (TJ)
Maximum Power Dissipation2.5W (Ta), 104W (Tc)
Maximum Pulse Drain Current100A
Maximum Total Gate Charge46nC
Maximum Total Gate Charge Test Voltage10V
Minimum Junction Temperature-55°C (TJ)
Package Type8-PQFN (5x6)
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge7.7nC
Typical Gate to Source Charge7.9nC