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FDMS86200
onsemi

FDMS86200

MFR #FDMS86200

FPN#FDMS86200-FL

MFRonsemi

Part DescriptionN-Channel 150 V 9.6A (Ta), 35A (Tc) 2.5W (Ta), 104W (Tc) Surface Mount 8-PQFN (5x6)
Datasheet
44728-Datasheet
Quote Onlymore info
Multiples of: 3000more info
Prices are in USD
Flip Electronics may assess a Tariff Recovery Fee relating to Tariffs on subject countries, including but not limited to China. The final charge will be included on Flip’s invoice. Flip Electronics reserves the right to assess this charge whenever a tariff is incurred or as additional country of origin information is known, even if no Tariff Recovery Fee is initially quoted.

Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameFDMS86200
Packaging TypeTape and Reel
Packaging Quantity3000
Lifecycle StatusActive
ROHSCompliant with Exemption
RoHs Exemption Type7(a), RoHS (2015/863)
RoHs ChinaNot Compliant
Reach StatusNot Compliant
Channel ModeEnhancement
ConfigurationN-Channel
Drain Source Voltage150V
Drive Voltage6V, 10V
FET FeatureN/R
FET OptionsN/R
FET TypeSingle
Gate to Source Voltage±20V
Input Capacitance2715pF
Input Capacitance Test Voltage75V
Life Cycle StatusActive
Maximum Continuous Drain Current9.6A (Ta), 35A (Tc)
Maximum Drain to Source Resistance18 mOhm @ 9.6A, 10V
Maximum Gate to Source Threshold Voltage4V @ 250µA
Maximum Junction Temperature150°C (TJ)
Maximum Operating Temperature150°C
Maximum Power Dissipation2.5W (Ta), 104W (Tc)
Maximum Pulse Drain Current100A
Maximum Total Gate Charge46nC
Maximum Total Gate Charge Test Voltage10V
Minimum Junction Temperature-55°C (TJ)
Minimum Operating TemperatureN/A
Package Type8-PQFN (5x6)
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge7.7nC
Typical Gate to Source Charge7.9nC