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FDMS86183
onsemi

FDMS86183

MFR #FDMS86183

FPN#FDMS86183-FL

MFRonsemi

Part DescriptionMOSFET N-Channel 100V 10A (Ta), 51A (Tc) 8-SON
Datasheet
154665-Datasheet
Quote Onlymore info
Multiples of: 3000more info
Prices are in USD
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Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameFDMS86183
Packaging TypeTape and Reel
Packaging Quantity3000
Lifecycle StatusActive
RoHSCompliant with Exemption
RoHS Exemption Type7(a), RoHS (2015/863)
Reach StatusNot Compliant
Channel ModeEnhancement
ConfigurationN-Channel
Drain Source Voltage100V
Drive Voltage6V, 10V
FET FeatureN/R
FET OptionsN/R
FET TypeSingle
Gate to Source Voltage±20V
Input Capacitance1515pF
Input Capacitance Test Voltage50V
Life Cycle StatusActive
Maximum Continuous Drain Current10A (Ta), 51A (Tc)
Maximum Drain to Source Resistance12.8 mOhm @ 16A, 10V
Maximum Gate to Source Threshold Voltage4V @ 90µA
Maximum Junction Temperature150°C (TJ)
Maximum Power Dissipation2.5W (Ta), 63W (Tc)
Maximum Pulse Drain Current187A
Maximum Total Gate Charge14nC
Maximum Total Gate Charge Test Voltage6V
Minimum Junction Temperature-55°C (TJ)
Package Type8-PQFN (4.9x5.8)
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge3.4nC
Typical Gate to Source Charge5nC