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FDMS86180
onsemi

FDMS86180

MFR #FDMS86180

FPN#FDMS86180-FL

MFRonsemi

Part DescriptionN-Channel 100 V 151A (Tc) 138W (Tc) Surface Mount Power56
Datasheet
44725-Datasheet
Quote Onlymore info
Multiples of: 3000more info
Prices are in USD
Flip Electronics may assess a Tariff Recovery Fee relating to Tariffs on subject countries, including but not limited to China. The final charge will be included on Flip’s invoice. Flip Electronics reserves the right to assess this charge whenever a tariff is incurred or as additional country of origin information is known, even if no Tariff Recovery Fee is initially quoted.

Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameFDMS86180
Packaging TypeTape and Reel
Packaging Quantity3000
Lifecycle StatusActive
RoHSCompliant with Exemption
RoHS Exemption Type7(a), RoHS (2015/863)
Reach StatusNot Compliant
Channel ModeEnhancement
ConfigurationN-Channel
Drain Source Voltage100V
Drive Voltage6V, 10V
FET FeatureN/R
FET OptionsN/R
FET TypeSingle
Gate to Source Voltage±20V
Input Capacitance6215pF
Input Capacitance Test Voltage50V
Life Cycle StatusActive
Maximum Continuous Drain Current151A (Tc)
Maximum Drain to Source Resistance3.2 mOhm @ 67A, 10V
Maximum Gate to Source Threshold Voltage4V @ 370µA
Maximum Junction Temperature150°C (TJ)
Maximum Operating TemperatureN/A
Maximum Power Dissipation138W (Tc)
Maximum Pulse Drain Current775A
Maximum Total Gate Charge54nC
Maximum Total Gate Charge Test Voltage6V
Minimum Junction Temperature-55°C (TJ)
Minimum Operating TemperatureN/A
Package Type8-PQFN (5x6)
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge12nC
Typical Gate to Source Charge20nC