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onsemi
FDMS86150A
MFR #FDMS86150A
FPN#FDMS86150A-FL
MFRonsemi
Part DescriptionN-Channel 100 V 16A (Ta), 60A (Tc) 2.7W (Ta), 113W (Tc) Surface Mount Power56
Datasheet
Quote Only
Product Attributes
Main Category | Semiconductors |
Category | Discrete Semiconductors |
Sub Category | Transistors |
Family Name | FDMS86150A |
Packaging Type | Tape and Reel |
Packaging Quantity | 3000 |
Lifecycle Status | Active |
ROHS | Compliant with Exemption |
RoHs Exemption Type | 7(a), RoHS (2015/863) |
Reach Status | Not Compliant |
Channel Mode | Enhancement |
Configuration | N-Channel |
Drain Source Voltage | 100V |
Drive Voltage | 6V, 10V |
FET Feature | N/R |
FET Options | N/R |
FET Type | Single |
Gate to Source Voltage | ±20V |
Input Capacitance | 4665pF |
Input Capacitance Test Voltage | 50V |
Life Cycle Status | Active |
Maximum Continuous Drain Current | 16A (Ta), 60A (Tc) |
Maximum Drain to Source Resistance | 4.85 mOhm @ 16A, 10V |
Maximum Gate to Source Threshold Voltage | 4V @ 250µA |
Maximum Junction Temperature | 150°C (TJ) |
Maximum Power Dissipation | 2.7W (Ta), 113W (Tc) |
Maximum Pulse Drain Current | 300A |
Maximum Total Gate Charge | 66nC |
Maximum Total Gate Charge Test Voltage | 10V |
Minimum Junction Temperature | -55°C (TJ) |
Package Type | 8-PQFN (5x6) |
Technology | MOSFET (Metal Oxide) |
Typical Gate to Drain Charge | 9.7nC |
Typical Gate to Source Charge | 14nC |