FDMS8050ET30
MFR #FDMS8050ET30
FPN#FDMS8050ET30-FL
MFRonsemi
Part DescriptionMOSFET N-Channel 30V 55A (Ta), 423A (Tc) 8-SON T/R
Datasheet
Quote Only
Product Attributes
| Main Category | Semiconductors |
| Category | Discrete Semiconductors |
| Sub Category | Transistors |
| Family Name | FDMS8050ET30 |
| Packaging Type | Tape and Reel |
| Packaging Quantity | 3000 |
| Lifecycle Status | Active (NRND) |
| RoHS | Compliant with Exemption |
| RoHS Exemption Type | 7(a), RoHS (2015/863) |
| ROHS China | Not Compliant |
| Reach Status | Not Compliant |
| Channel Mode | Enhancement |
| Configuration | N-Channel |
| Drain Source Voltage | 30V |
| Drive Voltage | 4.5V, 10V |
| FET Feature | N/R |
| FET Options | N/R |
| FET Type | Single |
| Gate to Source Voltage | ±20V |
| Input Capacitance | 22610pF |
| Input Capacitance Test Voltage | 15V |
| Life Cycle Status | Active (NRND) |
| Maximum Continuous Drain Current | 55A (Ta), 423A (Tc) |
| Maximum Drain to Source Resistance | 650 µOhm @ 55A, 10V |
| Maximum Gate to Source Threshold Voltage | 3V @ 750µA |
| Maximum Junction Temperature | 175°C (TJ) |
| Maximum Power Dissipation | 3.3W (Ta), 180W (Tc) |
| Maximum Pulse Drain Current | 1.914kA |
| Maximum Total Gate Charge | 285nC |
| Maximum Total Gate Charge Test Voltage | 10V |
| Minimum Junction Temperature | -55°C (TJ) |
| Package Type | Power56 |
| Technology | MOSFET (Metal Oxide) |
| Typical Gate to Drain Charge | 18nC |
| Typical Gate to Source Charge | 41nC |