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FDMS8025S
onsemi

FDMS8025S

MFR #FDMS8025S

FPN#FDMS8025S-FL

MFRonsemi

Part DescriptionMOSFET N-Channel 30V 24A (Ta), 49A (Tc) 8-SON T/R
Datasheet
148908-Datasheet
Quote Onlymore info
Multiples of: 3000more info
Prices are in USD
Flip Electronics may assess a Tariff Recovery Fee relating to Tariffs on subject countries, including but not limited to China. The final charge will be included on Flip’s invoice. Flip Electronics reserves the right to assess this charge whenever a tariff is incurred or as additional country of origin information is known, even if no Tariff Recovery Fee is initially quoted.

Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameFDMS8025S
Packaging TypeTape and Reel
Packaging Quantity3000
Lifecycle StatusActive (NRND)
ROHSCompliant with Exemption
RoHs Exemption Type7(a), RoHS (2015/863)
RoHs ChinaNot Compliant
Reach StatusNot Compliant
Channel ModeEnhancement
ConfigurationN-Channel
Drain Source Voltage30V
Drive Voltage4.5V, 10V
FET FeatureN/R
FET OptionsN/R
FET TypeSingle
Gate to Source Voltage±20V
Input Capacitance3000pF
Input Capacitance Test Voltage15V
Life Cycle StatusActive (NRND)
Maximum Continuous Drain Current24A (Ta), 49A (Tc)
Maximum Drain to Source Resistance2.8 mOhm @ 24A, 10V
Maximum Gate to Source Threshold Voltage3V @ 1mA
Maximum Junction Temperature150°C (TJ)
Maximum Operating TemperatureN/A
Maximum Power Dissipation2.5W (Ta), 50W (Tc)
Maximum Pulse Drain Current100A
Maximum Total Gate Charge47nC
Maximum Total Gate Charge Test Voltage10V
Minimum Junction Temperature-55°C (TJ)
Minimum Operating TemperatureN/A
Package Type8-PQFN (4.9x5.8)
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge4.6nC
Typical Gate to Source Charge5.9nC