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FDMS7602S
onsemi

FDMS7602S

MFR #FDMS7602S

FPN#FDMS7602S-FL

MFRonsemi

Part DescriptionMOSFET 2 N-Channel 30V 12A, 17A 8-SON
Datasheet
168233-Datasheet
Quote Onlymore info
Multiples of: 3000more info
Prices are in USD
Flip Electronics may assess a Tariff Recovery Fee relating to Tariffs on subject countries, including but not limited to China. The final charge will be included on Flip’s invoice. Flip Electronics reserves the right to assess this charge whenever a tariff is incurred or as additional country of origin information is known, even if no Tariff Recovery Fee is initially quoted.

Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameFDMS7602S
Packaging TypeTape and Reel
Packaging Quantity3000
Lifecycle StatusActive
RoHSCompliant
RoHS Exemption TypeNone, RoHS (2015/863)
ROHS ChinaCompliant
Reach StatusCompliant
Channel ModeEnhancement
Configuration2 N-Channel
Drain Source Voltage30V
Drive Voltage10V
FET FeatureLogic Level Gate
FET OptionsN/R
FET TypeArray
Gate to Source Voltage±20V
Input Capacitance1750pF
Input Capacitance Test Voltage15V
Life Cycle StatusActive
Maximum Continuous Drain Current12A, 17A
Maximum Drain to Source Resistance7.5 mOhm @ 12A, 10V
Maximum Gate to Source Threshold Voltage3V @ 250µA
Maximum Junction Temperature150°C (TJ)
Maximum Power Dissipation1W
Maximum Pulse Drain Current40A, 60A
Maximum Total Gate Charge28nC
Maximum Total Gate Charge Test Voltage10V
Minimum Junction Temperature-55°C (TJ)
PK Package Dimensions NotePopular package size 43% from Suppliers use this Dimension
Package Type8-MLP (5x6)
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge2.2nC
Typical Gate to Source Charge4.3nC