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FDMS6673BZ
MFR #FDMS6673BZ
FPN#FDMS6673BZ-FL
MFRonsemi
Part DescriptionMOSFET P-Channel 30V 15.2A (Ta), 28A (Tc) 2.5W (Ta), 73W (Tc) Surface Mount, 8-PQFN
Datasheet
Quote Only
Product Attributes
| Main Category | Semiconductors |
| Category | Discrete Semiconductors |
| Sub Category | Transistors |
| Family Name | FDMS6673BZ |
| Packaging Type | Tape and Reel |
| Packaging Quantity | 3000 |
| Lifecycle Status | Active |
| RoHS | Compliant with Exemption |
| RoHS Exemption Type | 7(a), RoHS (2015/863) |
| ROHS China | Not Compliant |
| Reach Status | Not Compliant |
| Channel Mode | Enhancement |
| Configuration | P-Channel |
| Drain Source Voltage | 30V |
| Drive Voltage | 4.5V, 10V |
| FET Feature | N/R |
| FET Options | N/R |
| FET Type | Single |
| Gate to Source Voltage | ±25V |
| Input Capacitance | 5915pF |
| Input Capacitance Test Voltage | 15V |
| Life Cycle Status | Active |
| Maximum Continuous Drain Current | 15.2A (Ta), 28A (Tc) |
| Maximum Drain to Source Resistance | 6.8 mOhm @ 15.2A, 10V |
| Maximum Gate to Source Threshold Voltage | 3V @ 250µA |
| Maximum Junction Temperature | 150°C (TJ) |
| Maximum Power Dissipation | 2.5W (Ta), 73W (Tc) |
| Maximum Pulse Drain Current | 120A |
| Maximum Total Gate Charge | 130nC |
| Maximum Total Gate Charge Test Voltage | 10V |
| Minimum Junction Temperature | -55°C (TJ) |
| Package Type | 8-PQFN (4.9x5.8) |
| Technology | MOSFET (Metal Oxide) |
| Typical Gate to Drain Charge | 26nC |
| Typical Gate to Source Charge | 13nC |