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FDMS3669S
onsemi

FDMS3669S

MFR #FDMS3669S

FPN#FDMS3669S-FL

MFRonsemi

Part DescriptionMosfet Array 2 N-Channel (Dual) Asymmetrical 30V 13A, 18A 1W Surface Mount Power56
Datasheet
44697-Datasheet
Quote Onlymore info
Multiples of: 3000more info
Prices are in USD
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Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameFDMS3669S
Packaging TypeTape and Reel
Packaging Quantity3000
Lifecycle StatusActive
RoHSCompliant with Exemption
RoHS Exemption Type7(a), RoHS (2015/863)
ROHS ChinaNot Compliant
Reach StatusNot Compliant
Channel ModeEnhancement
Configuration2 N-Channel
Drain Source Voltage30V
Drive Voltage4.5V, 10V
FET FeatureStandard
FET OptionsAsymmetrical
FET TypeArray
Gate to Source Voltage±20V, ±12V
Input Capacitance1605pF, 2060pF
Input Capacitance Test Voltage15V
Life Cycle StatusActive
Maximum Continuous Drain Current13A (Ta), 24A (Tc), 18A (Ta), 60A (Tc)
Maximum Drain to Source Resistance10 mOhm @ 13A, 10V, 5 mOhm @ 18A, 10V
Maximum Gate to Source Threshold Voltage2.7V @ 250µA, 2.5V @ 1mA
Maximum Junction Temperature150°C (TJ)
Maximum Power Dissipation1W (Ta)
Maximum Pulse Drain Current50A, 60A
Maximum Total Gate Charge24nC, 34nC
Maximum Total Gate Charge Test Voltage10V
Minimum Junction Temperature-55°C (TJ)
Package Type8-PQFN (5x6)
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge2nC, 3.6nC
Typical Gate to Source Charge3.9nC, 3.3nC