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FDMS3668S
onsemi

FDMS3668S

MFR #FDMS3668S

FPN#FDMS3668S-FL

MFRonsemi

Part DescriptionMosfet Array 30V 13A, 18A 1W Surface Mount Power56
Datasheet
44696-Datasheet
Quote Onlymore info
Multiples of: 3000more info
Prices are in USD
Flip Electronics may assess a Tariff Recovery Fee relating to Tariffs on subject countries, including but not limited to China. The final charge will be included on Flip’s invoice. Flip Electronics reserves the right to assess this charge whenever a tariff is incurred or as additional country of origin information is known, even if no Tariff Recovery Fee is initially quoted.

Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameFDMS3668S
Packaging TypeTape and Reel
Packaging Quantity3000
Lifecycle StatusObsolete
ROHSCompliant with Exemption
RoHs Exemption Type7(a), RoHS (2015/863)
RoHs ChinaNot Compliant
Reach StatusNot Compliant
Channel ModeEnhancement
Configuration2 N-Channel
Drain Source Voltage30V
Drive Voltage4.5V, 10V
FET FeatureLogic Level Gate
FET OptionsAsymmetrical
FET TypeArray
Gate to Source Voltage±20V, ±12V
Input Capacitance1765pF
Input Capacitance Test Voltage15V
Life Cycle StatusObsolete
Maximum Continuous Drain Current13A, 18A
Maximum Drain to Source Resistance8 mOhm @ 13A, 10V
Maximum Gate to Source Threshold Voltage2.7V @ 250µA, 2.2V @ 1mA
Maximum Junction Temperature150°C (TJ)
Maximum Operating TemperatureN/A
Maximum Power Dissipation1W
Maximum Pulse Drain Current60A
Maximum Total Gate Charge29nC
Maximum Total Gate Charge Test Voltage10V
Minimum Junction Temperature-55°C (TJ)
Minimum Operating TemperatureN/A
Package Type8-PQFN (5x6)
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge2.6nC
Typical Gate to Source Charge3.9nC