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FDMS3664S
onsemi

FDMS3664S

MFR #FDMS3664S

FPN#FDMS3664S-FL

MFRonsemi

Part DescriptionMOSFET 2N-CH 30V 13A/25A POWER56
Datasheet
168232-Datasheet
Quote Onlymore info
Multiples of: 3000more info
Prices are in USD
Flip Electronics may assess a Tariff Recovery Fee relating to Tariffs on subject countries, including but not limited to China. The final charge will be included on Flip’s invoice. Flip Electronics reserves the right to assess this charge whenever a tariff is incurred or as additional country of origin information is known, even if no Tariff Recovery Fee is initially quoted.

Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameFDMS3664S
Packaging TypeTape and Reel
Packaging Quantity3000
Lifecycle StatusActive
ROHSCompliant with Exemption
RoHs Exemption Type7(a), RoHS (2015/863)
RoHs ChinaNot Compliant
Reach StatusNot Compliant
Package Type8-PQFN (5x6)
Channel ModeEnhancement
Configuration2 N-Channel
Drain Source Voltage30V
Drive Voltage4.5V, 10V
FET FeatureStandard
FET OptionsAsymmetrical
FET TypeArray
Gate to Source Voltage±20V, ±12V
Input Capacitance1765pF, 3345pF
Input Capacitance Test Voltage15V
Maximum Continuous Drain Current13A (Ta), 30A (Tc), 25A (Ta), 60A (Tc)
Maximum Drain to Source Resistance8 mOhm @ 13A, 10V, 2.6 mOhm @ 25A, 10V
Maximum Gate to Source Threshold Voltage2.7V @ 250µA, 2.2V @ 1mA
Maximum Junction Temperature150°C (TJ)
Maximum Operating TemperatureN/A
Maximum Power Dissipation1W (Ta)
Maximum Pulse Drain Current40A, 100A
Maximum Total Gate Charge29nC, 52nC
Maximum Total Gate Charge Test Voltage10V
Minimum Junction Temperature-55°C (TJ)
Minimum Operating TemperatureN/A
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge2.6nC, 4nC
Typical Gate to Source Charge3.9nC, 5.9nC