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FDMS3660S
onsemi

FDMS3660S

MFR #FDMS3660S

FPN#FDMS3660S-FL

MFRonsemi

Part DescriptionMOSFET Array 2 N-Channel (Dual) Asymmetrical 30V 30A, 60A 1W Surface Mount, 8-PQFN
Datasheet
44695-Datasheet
Quote Onlymore info
Multiples of: 3000more info
Prices are in USD
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Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameFDMS3660S
Packaging TypeTape and Reel
Packaging Quantity3000
Lifecycle StatusLast Time Buy
RoHSCompliant with Exemption
RoHS Exemption Type7(a), RoHS (2015/863)
ROHS ChinaNot Compliant
Reach StatusNot Compliant
Channel ModeEnhancement
Configuration2 N-Channel
Drain Source Voltage30V
Drive Voltage4.5V, 10V
FET FeatureStandard
FET OptionsAsymmetrical
FET TypeArray
Gate to Source Voltage±20V, ±12V
Input Capacitance1765pF, 5493pF
Input Capacitance Test Voltage15V
Life Cycle StatusLast Time Buy
Maximum Continuous Drain Current13A (Ta), 30A (Tc), 30A (Ta), 60A (Tc)
Maximum Drain to Source Resistance8 mOhm @ 13A, 10V, 1.8 mOhm @ 30A, 10V
Maximum Gate to Source Threshold Voltage2.7V @ 250µA, 2.2V @ 1mA
Maximum Junction Temperature150°C (TJ)
Maximum Power Dissipation1W (Ta)
Maximum Pulse Drain Current40A, 120A
Maximum Total Gate Charge29nC, 87nC
Maximum Total Gate Charge Test Voltage10V
Minimum Junction Temperature-55°C (TJ)
Package Type8-PQFN (5x6)
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge2.6nC, 7nC
Typical Gate to Source Charge3.9nC, 9nC