(404) 551-4447EMEA TeamContact UsAbout UsCareers
loading content
FDMS3626S
onsemi

FDMS3626S

MFR #FDMS3626S

FPN#FDMS3626S-FL

MFRonsemi

Part DescriptionMosfet Array 2 N-Channel (Dual) Asymmetrical 25V 17.5A, 25A 1W Surface Mount Power56
Datasheet
44693-Datasheet
Quote Onlymore info
Multiples of: 3000more info
Prices are in USD
Flip Electronics may assess a Tariff Recovery Fee relating to Tariffs on subject countries, including but not limited to China. The final charge will be included on Flip’s invoice. Flip Electronics reserves the right to assess this charge whenever a tariff is incurred or as additional country of origin information is known, even if no Tariff Recovery Fee is initially quoted.

Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameFDMS3626S
Packaging TypeTape and Reel
Packaging Quantity3000
Lifecycle StatusObsolete
RoHSCompliant with Exemption
RoHS Exemption Type7(a), RoHS (2015/863)
ROHS ChinaNot Compliant
Reach StatusNot Compliant
Channel ModeEnhancement
Configuration2 N-Channel
Drain Source Voltage25V
Drive Voltage4.5V, 10V
FET FeatureLogic Level Gate
FET OptionsAsymmetrical
FET TypeArray
Gate to Source Voltage±12V
Input Capacitance1570pF
Input Capacitance Test Voltage13V
Life Cycle StatusObsolete
Maximum Continuous Drain Current17.5A, 25A
Maximum Drain to Source Resistance5 mOhm @ 17.5A, 10V
Maximum Gate to Source Threshold Voltage2V @ 250µA
Maximum Junction Temperature150°C (TJ)
Maximum Power Dissipation1W
Maximum Pulse Drain Current100A
Maximum Total Gate Charge26nC
Maximum Total Gate Charge Test Voltage10V
Minimum Junction Temperature-55°C (TJ)
Package Type8-PQFN (5x6)
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge4.3nC
Typical Gate to Source Charge3.3nC