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FDMS3615S
onsemi

FDMS3615S

MFR #FDMS3615S

FPN#FDMS3615S-FL

MFRonsemi

Part DescriptionMOSFET Array 2 N-Channel (Dual) Asymmetrical 25V 16A, 18A 1W Surface Mount, 8-PQFN
Datasheet
44690-Datasheet
Quote Onlymore info
Multiples of: 3000more info
Prices are in USD
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Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameFDMS3615S
Packaging TypeTape and Reel
Packaging Quantity3000
Lifecycle StatusObsolete
RoHSCompliant with Exemption
RoHS Exemption Type7(a), RoHS (2015/863)
ROHS ChinaNot Compliant
Reach StatusNot Compliant
Channel ModeEnhancement
Configuration2 N-Channel
Drain Source Voltage25V
Drive Voltage4.5V, 10V
FET FeatureLogic Level Gate
FET OptionsAsymmetrical
FET TypeArray
Gate to Source Voltage±20V
Input Capacitance1765pF
Input Capacitance Test Voltage13V
Life Cycle StatusObsolete
Maximum Continuous Drain Current16A, 18A
Maximum Drain to Source Resistance5.8 mOhm @ 16A, 10V
Maximum Gate to Source Threshold Voltage2.5V @ 250µA
Maximum Junction Temperature150°C (TJ)
Maximum Power Dissipation1W
Maximum Pulse Drain Current36A, 45A
Maximum Total Gate Charge27nC
Maximum Total Gate Charge Test Voltage10V
Minimum Junction Temperature-55°C (TJ)
Package Type8-PQFN (5x6)
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge3.7nC
Typical Gate to Source Charge3.6nC