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FDMS3602S-P
onsemi

FDMS3602S-P

MFR #FDMS3602S-P

FPN#FDMS3602S-P-FL

MFRonsemi

Part DescriptionMOSFET 2 N-Channel Array 25V 15A, 26A 8-SON
Datasheet
44686-Datasheet
Quote Onlymore info
Prices are in USD
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Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameFDMS3602S
Lifecycle StatusObsolete
RoHSCompliant
RoHS Exemption TypeRoHS (2015/863), Unknown
Reach StatusCompliant
Channel ModeEnhancement
Configuration2 N-Channel
Drain Source Voltage25V
Drive Voltage4.5V, 10V
FET FeatureStandard
FET OptionsN/R
FET TypeArray
Gate to Source Voltage±20V
Input Capacitance1680pF, 4120pF
Input Capacitance Test Voltage13V
Life Cycle StatusObsolete
Maximum Continuous Drain Current15A (Ta), 30A (Tc), 26A (Ta), 40A (Tc)
Maximum Drain to Source Resistance5.6 mOhm @ 15A, 10V
Maximum Gate to Source Threshold Voltage3V @ 250µA, 3V @ 1mA
Maximum Junction Temperature150°C (TJ)
Maximum Power Dissipation2.2W (Ta), 2.5W (Ta)
Maximum Pulse Drain Current40A, 100A
Maximum Total Gate Charge27nC, 64nC
Maximum Total Gate Charge Test Voltage10V
Minimum Junction Temperature-55°C (TJ)
Package Type8-PQFN (5x6)
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge5.3nC
Typical Gate to Source Charge3.9nC