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FDMS3602AS
MFR #FDMS3602AS
FPN#FDMS3602AS-FL
MFRonsemi
Part DescriptionMOSFET DUAL N-CH. ER TRENCH MO
Datasheet
Quote Only
Product Attributes
| Main Category | Semiconductors |
| Category | Discrete Semiconductors |
| Sub Category | Transistors |
| Family Name | FDMS3602AS |
| Packaging Type | Tape and Reel |
| Packaging Quantity | 3000 |
| Lifecycle Status | Obsolete |
| RoHS | Compliant with Exemption |
| RoHS Exemption Type | 7(a), RoHS (2015/863) |
| ROHS China | Not Compliant |
| Reach Status | Not Compliant |
| Channel Mode | Enhancement |
| Configuration | 2 N-Channel |
| Drain Source Voltage | 25V |
| Drive Voltage | 4.5V, 10V |
| FET Feature | Logic Level Gate |
| FET Options | Asymmetrical |
| FET Type | Array |
| Gate to Source Voltage | ±20V |
| Input Capacitance | 1770pF |
| Input Capacitance Test Voltage | 13V |
| Life Cycle Status | Obsolete |
| Maximum Continuous Drain Current | 15A, 26A |
| Maximum Drain to Source Resistance | 5.6 mOhm @ 15A, 10V |
| Maximum Gate to Source Threshold Voltage | 3V @ 250µA |
| Maximum Junction Temperature | 150°C (TJ) |
| Maximum Power Dissipation | 2.2W, 2.5W |
| Maximum Pulse Drain Current | 100A |
| Maximum Total Gate Charge | 27nC |
| Maximum Total Gate Charge Test Voltage | 10V |
| Minimum Junction Temperature | -55°C (TJ) |
| Package Type | 8-PQFN (5x6) |
| Technology | MOSFET (Metal Oxide) |
| Typical Gate to Drain Charge | 5.3nC |
| Typical Gate to Source Charge | 3.9nC |