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FDMS3600S
onsemi

FDMS3600S

MFR #FDMS3600S

FPN#FDMS3600S-FL

MFRonsemi

Part DescriptionMosfet Array 2 N-Channel (Dual) Asymmetrical 25V 15A (Ta), 30A (Tc), 30A (Ta), 40A (Tc) 2.2W (Ta), 2.5W (Ta) Surface Mount 8-PQFN (5x6)
Datasheet
44683-Datasheet
Quote Onlymore info
Multiples of: 3000more info
Prices are in USD
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Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameFDMS3600S
Packaging TypeTape and Reel
Packaging Quantity3000
Lifecycle StatusObsolete
ROHSCompliant with Exemption
RoHs Exemption Type7(a), RoHS (2015/863)
RoHs ChinaNot Compliant
Reach StatusNot Compliant
Channel ModeEnhancement
Configuration2 N-Channel
Drain Source Voltage25V
Drive Voltage4.5V, 10V
FET FeatureStandard
FET OptionsAsymmetrical
FET TypeArray
Gate to Source Voltage±20V
Input Capacitance1680pF, 5375pF
Input Capacitance Test Voltage13V
Life Cycle StatusObsolete
Maximum Continuous Drain Current15A (Ta), 30A (Tc), 30A (Ta), 40A (Tc)
Maximum Drain to Source Resistance5.6 mOhm @ 15A, 10V, 1.6 mOhm @ 30A, 10V
Maximum Gate to Source Threshold Voltage2.7V @ 250µA, 3V @ 1mA
Maximum Junction Temperature150°C (TJ)
Maximum Operating TemperatureN/A
Maximum Power Dissipation2.2W (Ta), 2.5W (Ta)
Maximum Pulse Drain Current40A, 100A
Maximum Total Gate Charge27nC, 82nC
Maximum Total Gate Charge Test Voltage10V
Minimum Junction Temperature-55°C (TJ)
Minimum Operating TemperatureN/A
Package Type8-PQFN (5x6)
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge2.4nC, 5.8nC
Typical Gate to Source Charge3.9nC, 11nC