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FDMS3600AS
onsemi

FDMS3600AS

MFR #FDMS3600AS

FPN#FDMS3600AS-FL

MFRonsemi

Part DescriptionMosfet Array 2 N-Channel (Dual) Asymmetrical 25V 15A, 30A 2.2W, 2.5W Surface Mount Power56
Datasheet
44682-Datasheet
Quote Onlymore info
Multiples of: 3000more info
Prices are in USD
Flip Electronics may assess a Tariff Recovery Fee relating to Tariffs on subject countries, including but not limited to China. The final charge will be included on Flip’s invoice. Flip Electronics reserves the right to assess this charge whenever a tariff is incurred or as additional country of origin information is known, even if no Tariff Recovery Fee is initially quoted.

Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameFDMS3600AS
Packaging TypeTape and Reel
Packaging Quantity3000
Lifecycle StatusObsolete
RoHSCompliant with Exemption
RoHS Exemption Type7(a), RoHS (2015/863)
ROHS ChinaNot Compliant
Reach StatusNot Compliant
Channel ModeEnhancement
Configuration2 N-Channel
Drain Source Voltage25V
Drive Voltage4.5V, 10V
FET FeatureLogic Level Gate
FET OptionsAsymmetrical
FET TypeArray
Gate to Source Voltage±20V
Input Capacitance1770pF
Input Capacitance Test Voltage13V
Life Cycle StatusObsolete
Maximum Continuous Drain Current15A, 30A
Maximum Drain to Source Resistance5.6 mOhm @ 15A, 10V
Maximum Gate to Source Threshold Voltage2.7V @ 250µA, 3V @ 1mA
Maximum Junction Temperature150°C (TJ)
Maximum Power Dissipation2.2W, 2.5W
Maximum Pulse Drain Current100A
Maximum Total Gate Charge27nC
Maximum Total Gate Charge Test Voltage10V
Minimum Junction Temperature-55°C (TJ)
Package Type8-PQFN (5x6)
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge5.8nC
Typical Gate to Source Charge3.9nC