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FDMS2672
onsemi

FDMS2672

MFR #FDMS2672

FPN#FDMS2672-FL

MFRonsemi

Part DescriptionMOSFET N-Channel 200 V 3.7A (Ta), 20A (Tc) 2.5W (Ta), 78W (Tc) Surface Mount 8-MLP, Power56
Datasheet
44680-Datasheet
Quote Onlymore info
Multiples of: 3000more info
Prices are in USD
Flip Electronics may assess a Tariff Recovery Fee relating to Tariffs on subject countries, including but not limited to China. The final charge will be included on Flip’s invoice. Flip Electronics reserves the right to assess this charge whenever a tariff is incurred or as additional country of origin information is known, even if no Tariff Recovery Fee is initially quoted.

Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameFDMS2672
Packaging TypeTape and Reel
Packaging Quantity3000
Lifecycle StatusActive
RoHSCompliant
RoHS Exemption TypeNone, RoHS (2015/863)
ROHS ChinaCompliant
Reach StatusCompliant
Channel ModeEnhancement
ConfigurationN-Channel
Drain Source Voltage200V
Drive Voltage6V, 10V
FET FeatureN/R
FET OptionsN/R
FET TypeSingle
Gate to Source Voltage±20V
Input Capacitance2315pF
Input Capacitance Test Voltage100V
Life Cycle StatusActive
Maximum Continuous Drain Current3.7A (Ta), 20A (Tc)
Maximum Drain to Source Resistance77 mOhm @ 3.7A, 10V
Maximum Gate to Source Threshold Voltage4V @ 250µA
Maximum Junction Temperature150°C (TJ)
Maximum Power Dissipation2.5W (Ta), 78W (Tc)
Maximum Pulse Drain Current96A
Maximum Total Gate Charge42nC
Maximum Total Gate Charge Test Voltage10V
Minimum Junction Temperature-55°C (TJ)
PK Package Dimensions NotePopular package size 43% from Suppliers use this Dimension
Package Type8-MLP (5x6), Power56
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge8nC
Typical Gate to Source Charge7nC