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FDMS1D4N03S
onsemi

FDMS1D4N03S

MFR #FDMS1D4N03S

FPN#FDMS1D4N03S-FL

MFRonsemi

Part DescriptionN-Channel 30V 211A (Tc) 74W (Tc) Surface Mount, 8-PQFN
Datasheet
44678-Datasheet
Quote Onlymore info
Multiples of: 3000more info
Prices are in USD
Flip Electronics may assess a Tariff Recovery Fee relating to Tariffs on subject countries, including but not limited to China. The final charge will be included on Flip’s invoice. Flip Electronics reserves the right to assess this charge whenever a tariff is incurred or as additional country of origin information is known, even if no Tariff Recovery Fee is initially quoted.

Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameFDMS1D4N03S
Packaging TypeTape and Reel
Packaging Quantity3000
Lifecycle StatusObsolete
RoHSCompliant with Exemption
RoHS Exemption Type7(a), RoHS (2015/863)
ROHS ChinaNot Compliant
Reach StatusNot Compliant
Channel ModeEnhancement
ConfigurationN-Channel
Drain Source Voltage30V
Drive Voltage4.5V, 10V
FET FeatureSchottky Diode (Body)
FET OptionsN/R
FET TypeSingle
Gate to Source Voltage±16V
Input Capacitance10250pF
Input Capacitance Test Voltage15V
Life Cycle StatusObsolete
Maximum Continuous Drain Current211A (Tc)
Maximum Drain to Source Resistance1.09 mOhm @ 38A, 10V
Maximum Gate to Source Threshold Voltage3V @ 1mA
Maximum Junction Temperature150°C (TJ)
Maximum Power Dissipation74W (Tc)
Maximum Pulse Drain Current1.14kA
Maximum Total Gate Charge65nC
Maximum Total Gate Charge Test Voltage4.5V
Minimum Junction Temperature-55°C (TJ)
Package Type8-PQFN (4.9x5.8)
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge9nC
Typical Gate to Source Charge18nC