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FDMS1D2N03DSD
onsemi

FDMS1D2N03DSD

MFR #FDMS1D2N03DSD

FPN#FDMS1D2N03DSD-FL

MFRonsemi

Part DescriptionMOSFET 2 N-Channel 30V 19A (Ta), 70A (Tc), 37A (Ta), 164A (Tc) 8-SON
Datasheet
99756-Datasheet
Quote Onlymore info
Multiples of: 3000more info
Prices are in USD
Flip Electronics may assess a Tariff Recovery Fee relating to Tariffs on subject countries, including but not limited to China. The final charge will be included on Flip’s invoice. Flip Electronics reserves the right to assess this charge whenever a tariff is incurred or as additional country of origin information is known, even if no Tariff Recovery Fee is initially quoted.

Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameFDMS1D2N03DSD
Packaging TypeTape and Reel
Packaging Quantity3000
Lifecycle StatusObsolete
RoHSCompliant with Exemption
RoHS Exemption Type7(a), RoHS (2015/863)
ROHS ChinaNot Compliant
Reach StatusNot Compliant
Channel ModeEnhancement
Configuration2 N-Channel
Drain Source Voltage30V
Drive Voltage4.5V, 10V
FET FeatureStandard
FET OptionsAsymmetrical
FET TypeArray
Gate to Source Voltage+16V, -12V
Input Capacitance1410pF, 4860pF
Input Capacitance Test Voltage15V
Life Cycle StatusObsolete
Maximum Continuous Drain Current19A (Ta), 70A (Tc), 37A (Ta), 164A (Tc)
Maximum Drain to Source Resistance3.25 mOhm @ 19A, 10V, 970 µOhm @ 37A, 10V
Maximum Gate to Source Threshold Voltage2.5V @ 320µA, 3V @ 1mA
Maximum Junction Temperature150°C (TJ)
Maximum Power Dissipation2.1W (Ta), 26W (Tc), 2.3W (Ta), 42W (Tc)
Maximum Pulse Drain Current362A, 1.199kA
Maximum Total Gate Charge33nC, 117nC
Maximum Total Gate Charge Test Voltage10V
Minimum Junction Temperature-55°C (TJ)
Package Type8-PQFN (5x6)
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge2.5nC, 9nC
Typical Gate to Source Charge3.1nC, 13nC