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FDMS1D2N03DSD
onsemi

FDMS1D2N03DSD

MFR #FDMS1D2N03DSD

FPN#FDMS1D2N03DSD-FL

MFRonsemi

Part DescriptionMOSFET 2 N-Channel 30V 19A (Ta), 70A (Tc), 37A (Ta), 164A (Tc) 8-SON
Datasheet
99756-Datasheet
Quote Onlymore info
Multiples of: 3000more info
Prices are in USD
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Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameFDMS1D2N03DSD
Packaging TypeTape and Reel
Packaging Quantity3000
Lifecycle StatusObsolete
RoHSCompliant with Exemption
RoHS Exemption Type7(a), RoHS (2015/863)
ROHS ChinaNot Compliant
Reach StatusNot Compliant
Channel ModeEnhancement
Configuration2 N-Channel
Drain Source Voltage30V
Drive Voltage4.5V, 10V
FET FeatureStandard
FET OptionsAsymmetrical
FET TypeArray
Gate to Source Voltage+16V, -12V
Input Capacitance1410pF, 4860pF
Input Capacitance Test Voltage15V
Life Cycle StatusObsolete
Maximum Continuous Drain Current19A (Ta), 70A (Tc), 37A (Ta), 164A (Tc)
Maximum Drain to Source Resistance3.25 mOhm @ 19A, 10V, 970 µOhm @ 37A, 10V
Maximum Gate to Source Threshold Voltage2.5V @ 320µA, 3V @ 1mA
Maximum Junction Temperature150°C (TJ)
Maximum Operating TemperatureN/A
Maximum Power Dissipation2.1W (Ta), 26W (Tc), 2.3W (Ta), 42W (Tc)
Maximum Pulse Drain Current362A, 1.199kA
Maximum Total Gate Charge33nC, 117nC
Maximum Total Gate Charge Test Voltage10V
Minimum Junction Temperature-55°C (TJ)
Minimum Operating TemperatureN/A
Package Type8-PQFN (5x6)
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge2.5nC, 9nC
Typical Gate to Source Charge3.1nC, 13nC