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onsemi

FDMQ8403

MFR #FDMQ8403

FPN#FDMQ8403-FL

MFRonsemi

Part DescriptionMOSFET 4N-CH 100V 3.1A 12MLP
Datasheet
140193-Datasheet
Quote Onlymore info
Multiples of: 3000more info
Prices are in USD
Flip Electronics may assess a Tariff Recovery Fee relating to Tariffs on subject countries, including but not limited to China. The final charge will be included on Flip’s invoice. Flip Electronics reserves the right to assess this charge whenever a tariff is incurred or as additional country of origin information is known, even if no Tariff Recovery Fee is initially quoted.

Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameFDMQ8403
Packaging TypeTape and Reel
Packaging Quantity3000
Lifecycle StatusActive
RoHSCompliant
RoHS Exemption TypeNone, RoHS (2015/863)
ROHS ChinaCompliant
Reach StatusCompliant
Package Type12-MLP (4.5x5)
Channel ModeEnhancement
Configuration4 N-Channel
Drain Source Voltage100V
Drive Voltage6V, 10V
FET FeatureStandard
FET OptionsHalf Bridge
FET TypeArray
Gate to Source Voltage±20V
Input Capacitance215pF
Input Capacitance Test Voltage15V
Maximum Continuous Drain Current3.1A
Maximum Drain to Source Resistance110 mOhm @ 3A, 10V
Maximum Gate to Source Threshold Voltage4V @ 250µA
Maximum Junction Temperature150°C (TJ)
Maximum Power Dissipation1.9W
Maximum Pulse Drain Current12A
Maximum Total Gate Charge5nC
Maximum Total Gate Charge Test Voltage10V
Minimum Junction Temperature-55°C (TJ)
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge800pC
Typical Gate to Source Charge900pC