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onsemi

FDME910PZT-P

MFR #FDME910PZT-P

FPN#FDME910PZT-P-FL

MFRonsemi

Part DescriptionMOSFET P-Channel 20V 8A(Ta) 2.1W(Ta) Surface Mount, 6-FDFN
Datasheet
100845-Datasheet
Quote Onlymore info
Multiples of: 5000more info
Prices are in USD
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Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameFDME910PZT-P
Packaging TypeTape and Reel
Packaging Quantity5000
Lifecycle StatusActive (Unconfirmed)
RoHSCompliant
RoHS Exemption TypeNone, RoHS (2015/863)
Reach StatusCompliant
Channel ModeEnhancement
ConfigurationP-Channel
Drain Source Voltage20V
Drive Voltage1.8V, 4.5V
FET FeatureN/R
FET OptionsN/R
FET TypeSingle
Gate to Source Voltage±8V
Input Capacitance2110pF
Input Capacitance Test Voltage10V
Life Cycle StatusActive (Unconfirmed)
Maximum Continuous Drain Current8A (Ta)
Maximum Drain to Source Resistance24 mOhm @ 8A, 4.5V
Maximum Gate to Source Threshold Voltage1.5V @ 250µA
Maximum Junction Temperature150°C (TJ)
Maximum Power Dissipation700mW (Ta)
Maximum Pulse Drain Current32A
Maximum Total Gate Charge21nC
Maximum Total Gate Charge Test Voltage4.5V
Minimum Junction Temperature-55°C (TJ)
Package TypeMicroFet 1.6x1.6 Thin
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge3.6nC
Typical Gate to Source Charge2.2nC