(404) 551-4447EMEA TeamContact UsAbout UsCareers
loading content
FDME910PZT
onsemi

FDME910PZT

MFR #FDME910PZT

FPN#FDME910PZT-FL

MFRonsemi

Part DescriptionMOSFET P-Channel 20V 8A (Ta) 2.1W (Ta) Surface Mount, 6-PowerFDFN
Datasheet
100913-Datasheet
Quote Onlymore info
Multiples of: 5000more info
Prices are in USD
Flip Electronics may assess a Tariff Recovery Fee relating to Tariffs on subject countries, including but not limited to China. The final charge will be included on Flip’s invoice. Flip Electronics reserves the right to assess this charge whenever a tariff is incurred or as additional country of origin information is known, even if no Tariff Recovery Fee is initially quoted.

Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameFDME910PZT
Packaging TypeTape and Reel
Packaging Quantity5000
Lifecycle StatusObsolete
RoHSCompliant
RoHS Exemption TypeNone, RoHS (2015/863)
ROHS ChinaCompliant
Reach StatusCompliant
Channel ModeEnhancement
ConfigurationP-Channel
Drain Source Voltage20V
Drive Voltage1.8V, 4.5V
FET FeatureN/R
FET OptionsN/R
FET TypeSingle
Gate to Source Voltage±8V
Input Capacitance2110pF
Input Capacitance Test Voltage10V
Life Cycle StatusObsolete
Maximum Continuous Drain Current8A (Ta)
Maximum Drain to Source Resistance24 mOhm @ 8A, 4.5V
Maximum Gate to Source Threshold Voltage1.5V @ 250µA
Maximum Junction Temperature150°C (TJ)
Maximum Power Dissipation2.1W (Ta)
Maximum Pulse Drain Current32A
Maximum Total Gate Charge21nC
Maximum Total Gate Charge Test Voltage4.5V
Minimum Junction Temperature-55°C (TJ)
Package Type6-UDFN (1.6x1.6)
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge3.6nC
Typical Gate to Source Charge2.2nC