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FDME905PT
MFR #FDME905PT
FPN#FDME905PT-FL
MFRonsemi
Part DescriptionMOSFET P-Channel 12V 8A(Ta) 2.1W(Ta) Surface Mount, 6-UDFN
Datasheet
Quote Only
Product Attributes
| Main Category | Semiconductors |
| Category | Discrete Semiconductors |
| Sub Category | Transistors |
| Family Name | FDME905PT |
| Packaging Type | Tape and Reel |
| Packaging Quantity | 5000 |
| Lifecycle Status | Active |
| RoHS | Compliant |
| RoHS Exemption Type | None, RoHS (2015/863) |
| ROHS China | Compliant |
| Reach Status | Compliant |
| Channel Mode | Enhancement |
| Configuration | P-Channel |
| Drain Source Voltage | 12V |
| Drive Voltage | 1.8V, 4.5V |
| FET Feature | N/R |
| FET Options | N/R |
| FET Type | Single |
| Gate to Source Voltage | ±8V |
| Input Capacitance | 2315pF |
| Input Capacitance Test Voltage | 6V |
| Life Cycle Status | Active |
| Maximum Continuous Drain Current | 8A (Ta) |
| Maximum Drain to Source Resistance | 22 mOhm @ 8A, 4.5V |
| Maximum Gate to Source Threshold Voltage | 1V @ 250µA |
| Maximum Junction Temperature | 150°C (TJ) |
| Maximum Power Dissipation | 2.1W (Ta) |
| Maximum Pulse Drain Current | 30A |
| Maximum Total Gate Charge | 20nC |
| Maximum Total Gate Charge Test Voltage | 4.5V |
| Minimum Junction Temperature | -55°C (TJ) |
| Package Type | 6-UDFN (1.6x1.6) |
| Technology | MOSFET (Metal Oxide) |
| Typical Gate to Drain Charge | 3nC |
| Typical Gate to Source Charge | 2.4nC |