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FDME820NZT-P
onsemi

FDME820NZT-P

MFR #FDME820NZT-P

FPN#FDME820NZT-P-FL

MFRonsemi

Part DescriptionMOSFETs | FDME820NZT
Datasheet
44659-Datasheet
Quote Onlymore info
Multiples of: 5000more info
Prices are in USD
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Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameFDME820NZT
Lifecycle StatusObsolete
RoHSCompliant
RoHS Exemption TypeRoHS (2015/863), Unknown
ROHS ChinaCompliant
Reach StatusCompliant
Channel ModeEnhancement
ConfigurationN-Channel
Drain Source Voltage20V
Drive Voltage1.8V, 4.5V
FET FeatureN/R
FET OptionsN/R
FET TypeSingle
Gate to Source Voltage±12V
Input Capacitance865pF
Input Capacitance Test Voltage10V
Life Cycle StatusObsolete
Maximum Continuous Drain Current9A (Ta)
Maximum Drain to Source Resistance18 mOhm @ 9A, 4.5V
Maximum Gate to Source Threshold Voltage1V @ 250µA
Maximum Junction Temperature150°C (TJ)
Maximum Power Dissipation700mW
Maximum Pulse Drain Current40A
Maximum Total Gate Charge8.5nC
Maximum Total Gate Charge Test Voltage4.5V
Minimum Junction Temperature-55°C (TJ)
Package Type6-UDFN (1.6x1.6)
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge3.2nC
Typical Gate to Source Charge1.4nC