loading content
FDME1023PZT

FDME1023PZT

MFR #FDME1023PZT

FPN#FDME1023PZT-FL

MFRonsemi

Part DescriptionMosfet Array 20V 2.6A 600mW Surface Mount 6-MicroFET (1.6x1.6)
Quote Onlymore info
Multiples of: 5000more info
Prices are in USD
Flip Electronics may assess a Tariff Recovery Fee relating to Tariffs on subject countries, including but not limited to China. The final charge will be included on Flip’s invoice. Flip Electronics reserves the right to assess this charge whenever a tariff is incurred or as additional country of origin information is known, even if no Tariff Recovery Fee is initially quoted.

Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameFDME1023PZT
Packaging TypeTape and Reel
Packaging Quantity5000
Lifecycle StatusObsolete
RoHSCompliant
RoHS Exemption TypeNone, RoHS (2015/863)
ROHS ChinaCompliant
Reach StatusCompliant
Channel ModeEnhancement
Configuration2 P-Channel
Drain Source Voltage20V
Drive Voltage1.5V, 4.5V
FET FeatureLogic Level Gate
FET OptionsN/R
FET TypeArray
Gate to Source Voltage±8V
Input Capacitance405pF
Input Capacitance Test Voltage10V
Life Cycle StatusObsolete
Maximum Continuous Drain Current2.6A
Maximum Drain to Source Resistance142 mOhm @ 2.3A, 4.5V
Maximum Gate to Source Threshold Voltage1V @ 250µA
Maximum Junction Temperature150°C (TJ)
Maximum Power Dissipation600mW
Maximum Pulse Drain Current6A
Maximum Total Gate Charge7.7nC
Maximum Total Gate Charge Test Voltage4.5V
Minimum Junction Temperature-55°C (TJ)
Package Type6-UDFN (1.6x1.6)
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge1.4nC
Typical Gate to Source Charge600pC