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onsemi

FDMD8900

MFR #FDMD8900

FPN#FDMD8900-FL

MFRonsemi

Part DescriptionMosfet Array 2 N-Channel (Dual) 30V 19A, 17A 2.1W Surface Mount 12-Power3.3x5
Datasheet
44657-Datasheet
Quote Onlymore info
Multiples of: 3000more info
Prices are in USD
Flip Electronics may assess a Tariff Recovery Fee relating to Tariffs on subject countries, including but not limited to China. The final charge will be included on Flip’s invoice. Flip Electronics reserves the right to assess this charge whenever a tariff is incurred or as additional country of origin information is known, even if no Tariff Recovery Fee is initially quoted.

Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameFDMD8900
Packaging TypeTape and Reel
Packaging Quantity3000
Lifecycle StatusObsolete
RoHSCompliant with Exemption
RoHS Exemption Type7(a), RoHS (2015/863)
ROHS ChinaNot Compliant
Reach StatusNot Compliant
Channel ModeEnhancement
Configuration2 N-Channel
Drain Source Voltage30V
Drive Voltage3.5V, 10V
FET FeatureStandard
FET OptionsN/R
FET TypeArray
Gate to Source Voltage±12V
Input Capacitance2605pF
Input Capacitance Test Voltage15V
Life Cycle StatusObsolete
Maximum Continuous Drain Current19A, 17A
Maximum Drain to Source Resistance4 mOhm @ 19A, 10V
Maximum Gate to Source Threshold Voltage2.5V @ 250µA
Maximum Junction Temperature150°C (TJ)
Maximum Power Dissipation2.1W
Maximum Pulse Drain Current280A
Maximum Total Gate Charge35nC
Maximum Total Gate Charge Test Voltage10V
Minimum Junction Temperature-55°C (TJ)
Package Type12-Power3.3x5
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge2.7nC
Typical Gate to Source Charge3.6nC