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onsemi
FDMD8680
MFR #FDMD8680
FPN#FDMD8680-FL
MFRonsemi
Part DescriptionMOSFET 2N-CH 80V 66A 8PWR 5X6
Datasheet
Quote Only
Product Attributes
| Main Category | Semiconductors |
| Category | Discrete Semiconductors |
| Sub Category | Transistors |
| Family Name | FDMD8680 |
| Packaging Type | Tape and Reel |
| Packaging Quantity | 3000 |
| Lifecycle Status | Obsolete |
| ROHS | Compliant with Exemption |
| RoHs Exemption Type | 7(a), RoHS (2015/863) |
| RoHs China | Not Compliant |
| Reach Status | Not Compliant |
| Package Type | 8-PQFN (5x6) |
| Channel Mode | Enhancement |
| Configuration | 2 N-Channel |
| Drain Source Voltage | 80V |
| Drive Voltage | 8V, 10V |
| FET Feature | Standard |
| FET Options | N/R |
| FET Type | Array |
| Gate to Source Voltage | ±20V |
| Input Capacitance | 5330pF |
| Input Capacitance Test Voltage | 40V |
| Maximum Continuous Drain Current | 66A (Tc) |
| Maximum Drain to Source Resistance | 4.7 mOhm @ 16A, 10V |
| Maximum Gate to Source Threshold Voltage | 4V @ 250µA |
| Maximum Junction Temperature | 150°C |
| Maximum Operating Temperature | N/A |
| Maximum Power Dissipation | 39W |
| Maximum Pulse Drain Current | 487A |
| Maximum Total Gate Charge | 73nC |
| Maximum Total Gate Charge Test Voltage | 10V |
| Minimum Junction Temperature | -55°C |
| Minimum Operating Temperature | N/A |
| PK Package Dimensions Note | Popular package size 43% from Suppliers use this Dimension |
| Technology | MOSFET (Metal Oxide) |
| Typical Gate to Drain Charge | 10nC |
| Typical Gate to Source Charge | 17nC |