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FDMD84100
onsemi

FDMD84100

MFR #FDMD84100

FPN#FDMD84100-FL

MFRonsemi

Part DescriptionMosfet Array 100V 7A 2.1W Surface Mount Power 3.3x5
Datasheet
122067-Datasheet
Quote Onlymore info
Multiples of: 3000more info
Prices are in USD
Flip Electronics may assess a Tariff Recovery Fee relating to Tariffs on subject countries, including but not limited to China. The final charge will be included on Flip’s invoice. Flip Electronics reserves the right to assess this charge whenever a tariff is incurred or as additional country of origin information is known, even if no Tariff Recovery Fee is initially quoted.

Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameFDMD84100
Packaging TypeTape and Reel
Packaging Quantity3000
Lifecycle StatusObsolete
RoHSCompliant with Exemption
RoHS Exemption Type7(a), RoHS (2015/863)
ROHS ChinaNot Compliant
Reach StatusNot Compliant
Channel ModeEnhancement
Configuration2 N-Channel, Common Source
Drain Source Voltage100V
Drive Voltage6V, 10V
FET FeatureStandard
FET OptionsN/R
FET TypeArray
Gate to Source Voltage±20V
Input Capacitance980pF
Input Capacitance Test Voltage50V
Life Cycle StatusObsolete
Maximum Continuous Drain Current7A
Maximum Drain to Source Resistance20 mOhm @ 7A, 10V
Maximum Gate to Source Threshold Voltage4V @ 250µA
Maximum Junction Temperature150°C (TJ)
Maximum Power Dissipation2.1W
Maximum Pulse Drain Current80A
Maximum Total Gate Charge16nC
Maximum Total Gate Charge Test Voltage10V
Minimum Junction Temperature-55°C (TJ)
Package Type8-PQFN (3.3x5)
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge2.5nC
Typical Gate to Source Charge3.4nC