_medium_204x204px.png)
FDMC8651
MFR #FDMC8651
FPN#FDMC8651-FL
MFRonsemi
Part DescriptionMOSFET N-Channel Single 30V 15A(Ta) 20A(Tc) 41W(Tc) Surface Mount, 8-PQFN
Datasheet
Quote Only
Product Attributes
| Main Category | Semiconductors |
| Category | Discrete Semiconductors |
| Sub Category | Transistors |
| Family Name | FDMC8651 |
| Packaging Type | Tape and Reel |
| Packaging Quantity | 3000 |
| Lifecycle Status | Active |
| RoHS | Compliant |
| RoHS Exemption Type | None, RoHS (2015/863) |
| ROHS China | Compliant |
| Reach Status | Compliant |
| Channel Mode | Enhancement |
| Configuration | N-Channel |
| Drain Source Voltage | 30V |
| Drive Voltage | 2.5V, 4.5V |
| FET Feature | N/R |
| FET Options | N/R |
| FET Type | Single |
| Gate to Source Voltage | ±12V |
| Input Capacitance | 3365pF |
| Input Capacitance Test Voltage | 15V |
| Life Cycle Status | Active |
| Maximum Continuous Drain Current | 15A (Ta), 20A (Tc) |
| Maximum Drain to Source Resistance | 6.1 mOhm @ 15A, 4.5V |
| Maximum Gate to Source Threshold Voltage | 1.5V @ 250µA |
| Maximum Junction Temperature | 150°C (TJ) |
| Maximum Operating Temperature | 150°C |
| Maximum Power Dissipation | 2.3W (Ta), 41W (Tc) |
| Maximum Pulse Drain Current | 60A |
| Maximum Total Gate Charge | 27.2nC |
| Maximum Total Gate Charge Test Voltage | 4.5V |
| Minimum Junction Temperature | -55°C (TJ) |
| Minimum Operating Temperature | N/A |
| Package Type | 8-PQFN (3.3x3.3) |
| Technology | MOSFET (Metal Oxide) |
| Typical Gate to Drain Charge | 4.2nC |
| Typical Gate to Source Charge | 4.8nC |
