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FDMC8651
MFR #FDMC8651
FPN#FDMC8651-FL
MFRonsemi
Part DescriptionMOSFET N-Channel Single 30V 15A(Ta) 20A(Tc) 41W(Tc) Surface Mount, 8-PQFN
Datasheet
Quote Only
Product Attributes
Main Category | Semiconductors |
Category | Discrete Semiconductors |
Sub Category | Transistors |
Family Name | FDMC8651 |
Packaging Type | Tape and Reel |
Packaging Quantity | 3000 |
Lifecycle Status | Active |
RoHS | Compliant |
RoHS Exemption Type | None, RoHS (2015/863) |
ROHS China | Compliant |
Reach Status | Compliant |
Channel Mode | Enhancement |
Configuration | N-Channel |
Drain Source Voltage | 30V |
Drive Voltage | 2.5V, 4.5V |
FET Feature | N/R |
FET Options | N/R |
FET Type | Single |
Gate to Source Voltage | ±12V |
Input Capacitance | 3365pF |
Input Capacitance Test Voltage | 15V |
Life Cycle Status | Active |
Maximum Continuous Drain Current | 15A (Ta), 20A (Tc) |
Maximum Drain to Source Resistance | 6.1 mOhm @ 15A, 4.5V |
Maximum Gate to Source Threshold Voltage | 1.5V @ 250µA |
Maximum Junction Temperature | 150°C (TJ) |
Maximum Power Dissipation | 2.3W (Ta), 41W (Tc) |
Maximum Pulse Drain Current | 60A |
Maximum Total Gate Charge | 27.2nC |
Maximum Total Gate Charge Test Voltage | 4.5V |
Minimum Junction Temperature | -55°C (TJ) |
Package Type | 8-PQFN (3.3x3.3) |
Technology | MOSFET (Metal Oxide) |
Typical Gate to Drain Charge | 4.2nC |
Typical Gate to Source Charge | 4.8nC |