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FDMC8651
MFR #FDMC8651
FPN#FDMC8651-FL
MFRonsemi
Part DescriptionMOSFET N-Channel Single 30V 15A(Ta) 20A(Tc) 41W(Tc) Surface Mount, 8-PQFN
Datasheet
Quote Only
Product Attributes
| Main Category | Semiconductors | 
| Category | Discrete Semiconductors | 
| Sub Category | Transistors | 
| Family Name | FDMC8651 | 
| Packaging Type | Tape and Reel | 
| Packaging Quantity | 3000 | 
| Lifecycle Status | Active | 
| RoHS | Compliant | 
| RoHS Exemption Type | None, RoHS (2015/863) | 
| ROHS China | Compliant | 
| Reach Status | Compliant | 
| Channel Mode | Enhancement | 
| Configuration | N-Channel | 
| Drain Source Voltage | 30V | 
| Drive Voltage | 2.5V, 4.5V | 
| FET Feature | N/R | 
| FET Options | N/R | 
| FET Type | Single | 
| Gate to Source Voltage | ±12V | 
| Input Capacitance | 3365pF | 
| Input Capacitance Test Voltage | 15V | 
| Life Cycle Status | Active | 
| Maximum Continuous Drain Current | 15A (Ta), 20A (Tc) | 
| Maximum Drain to Source Resistance | 6.1 mOhm @ 15A, 4.5V | 
| Maximum Gate to Source Threshold Voltage | 1.5V @ 250µA | 
| Maximum Junction Temperature | 150°C (TJ) | 
| Maximum Operating Temperature | 150°C | 
| Maximum Power Dissipation | 2.3W (Ta), 41W (Tc) | 
| Maximum Pulse Drain Current | 60A | 
| Maximum Total Gate Charge | 27.2nC | 
| Maximum Total Gate Charge Test Voltage | 4.5V | 
| Minimum Junction Temperature | -55°C (TJ) | 
| Minimum Operating Temperature | N/A | 
| Package Type | 8-PQFN (3.3x3.3) | 
| Technology | MOSFET (Metal Oxide) | 
| Typical Gate to Drain Charge | 4.2nC | 
| Typical Gate to Source Charge | 4.8nC | 
