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FDMC86262P
onsemi

FDMC86262P

MFR #FDMC86262P

FPN#FDMC86262P-FL

MFRonsemi

Part DescriptionMOSFET P-CH 150V 2A/8.4A 8MLP
Datasheet
100752-Datasheet
Quote Only
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Multiples of: 3000
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Prices are in USD
Flip Electronics may assess a Tariff Recovery Fee relating to Tariffs on subject countries, including but not limited to China. The final charge will be included on Flip’s invoice. Flip Electronics reserves the right to assess this charge whenever a tariff is incurred or as additional country of origin information is known, even if no Tariff Recovery Fee is initially quoted.

Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameFDMC86262P
Packaging TypeTape and Reel
Packaging Quantity3000
Lifecycle StatusActive
ROHSCompliant
RoHs Exemption TypeNone, RoHS (2015/863)
RoHs ChinaCompliant
Reach StatusCompliant
Package Type8-WDFN (3.3x3.3)
Channel ModeEnhancement
ConfigurationP-Channel
Drain Source Voltage150V
Drive Voltage6V, 10V
FET FeatureN/R
FET OptionsN/R
FET TypeSingle
Gate to Source Voltage±25V
Input Capacitance885pF
Input Capacitance Test Voltage75V
Maximum Continuous Drain Current2A (Ta), 8.4A (Tc)
Maximum Drain to Source Resistance307 mOhm @ 2A, 10V
Maximum Gate to Source Threshold Voltage4V @ 250µA
Maximum Junction Temperature150°C (TJ)
Maximum Operating TemperatureN/A
Maximum Power Dissipation2.3W (Ta), 40W (Tc)
Maximum Pulse Drain Current35A
Maximum Total Gate Charge13nC
Maximum Total Gate Charge Test Voltage10V
Minimum Junction Temperature-55°C (TJ)
Minimum Operating TemperatureN/A
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge1.6nC
Typical Gate to Source Charge2.5nC