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FDMC86106LZ
onsemi

FDMC86106LZ

MFR #FDMC86106LZ

FPN#FDMC86106LZ-FL

MFRonsemi

Part DescriptionMOSFET N-Channel 100V 3.3A (Ta), 7.5A (Tc) 8-SON
Datasheet
190753-Datasheet
Quote Onlymore info
Multiples of: 3000more info
Prices are in USD
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Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameFDMC86106LZ
Packaging TypeTape and Reel
Lifecycle StatusActive
ROHSCompliant
RoHs Exemption TypeNone, RoHS (2015/863)
Reach StatusCompliant
Channel ModeEnhancement
ConfigurationN-Channel
Drain Source Voltage100V
Drive Voltage4.5V, 10V
FET FeatureN/R
FET OptionsN/R
FET TypeSingle
Gate to Source Voltage±20V
Input Capacitance310pF
Input Capacitance Test Voltage50V
Life Cycle StatusActive
Maximum Continuous Drain Current3.3A (Ta), 7.5A (Tc)
Maximum Drain to Source Resistance103 mOhm @ 3.3A, 10V
Maximum Gate to Source Threshold Voltage2.2V @ 250µA
Maximum Junction Temperature150°C (TJ)
Maximum Power Dissipation2.3W (Ta), 19W (Tc)
Maximum Pulse Drain Current15A
Maximum Total Gate Charge6nC
Maximum Total Gate Charge Test Voltage10V
Minimum Junction Temperature-55°C (TJ)
PK Package Dimensions NotePopular package size 71% from Suppliers use this Dimension
Package Type8-MLP (3.3x3.3)
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge700pC
Typical Gate to Source Charge800pC