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FDMC8360LET40
onsemi

FDMC8360LET40

MFR #FDMC8360LET40

FPN#FDMC8360LET40-FL

MFRonsemi

Part DescriptionMOSFET N-CH 40V 27A/141A POWER33
Datasheet
168227-Datasheet
Quote Onlymore info
Multiples of: 3000more info
Prices are in USD
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Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameFDMC8360LET40
Packaging TypeTape and Reel
Packaging Quantity3000
Lifecycle StatusActive
ROHSCompliant with Exemption
RoHs Exemption Type7(a), RoHS (2015/863)
Reach StatusNot Compliant
Channel ModeEnhancement
ConfigurationN-Channel
Drain Source Voltage40V
Drive Voltage4.5V, 10V
FET FeatureN/R
FET OptionsN/R
FET TypeSingle
Gate to Source Voltage±20V
Input Capacitance5300pF
Input Capacitance Test Voltage20V
Life Cycle StatusActive (NRND)
Maximum Continuous Drain Current27A (Ta), 141A (Tc)
Maximum Drain to Source Resistance2.1 mOhm @ 27A, 10V
Maximum Gate to Source Threshold Voltage3V @ 250µA
Maximum Junction Temperature175°C (TJ)
Maximum Power Dissipation2.8W (Ta), 75W (Tc)
Maximum Pulse Drain Current658A
Maximum Total Gate Charge80nC
Maximum Total Gate Charge Test Voltage10V
Minimum Junction Temperature-55°C (TJ)
Package Type8-WDFN (3.3x3.3)
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge8.1nC
Typical Gate to Source Charge9.9nC