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FDMC8200S
onsemi

FDMC8200S

MFR #FDMC8200S

FPN#FDMC8200S-FL

MFRonsemi

Part DescriptionMosfet Array 2 N-Channel (Dual) 30V 6A, 8.5A 700mW, 1W Surface Mount 8-Power33 (3x3)
Datasheet
44641-Datasheet
Quote Onlymore info
Multiples of: 3000more info
Prices are in USD
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Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameFDMC8200S
Packaging TypeTape and Reel
Packaging Quantity3000
Lifecycle StatusActive
RoHSCompliant
RoHS Exemption TypeNone, RoHS (2015/863)
ROHS ChinaCompliant
Reach StatusCompliant
Channel ModeEnhancement
Configuration2 N-Channel
Drain Source Voltage30V
Drive Voltage4.5V, 10V
FET FeatureLogic Level Gate
FET OptionsN/R
FET TypeArray
Gate to Source Voltage±20V
Input Capacitance660pF
Input Capacitance Test Voltage15V
Life Cycle StatusActive
Maximum Continuous Drain Current6A, 8.5A
Maximum Drain to Source Resistance20 mOhm @ 6A, 10V
Maximum Gate to Source Threshold Voltage3V @ 250µA
Maximum Junction Temperature150°C (TJ)
Maximum Power Dissipation700mW, 1W
Maximum Pulse Drain Current40A
Maximum Total Gate Charge10nC
Maximum Total Gate Charge Test Voltage10V
Minimum Junction Temperature-55°C (TJ)
Package Type8-WDFN (3x3)
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge1.9nC
Typical Gate to Source Charge1.8nC